A Novel Approach to Investigate Analog and Digital Circuit Applications of Silicon Junctionless-Double-Gate (JL-DG) MOSFETs

The double gate junctionless transistor (DG-JLT) has become the most promising device in sub nano-meter regime. DGJLT based circuits have improved performance and simpler fabrication than their inversion mode counterparts. This paper demonstrates design of different analog digital using DGJLT. Amplifiers inverters are basic building block electronic ICs. A MOS amplifier converts variation to source voltage a small current under transconductance hence, output voltage. single-stage differential been designed with junctionless-double-gate (JL-DG) MOSFET. Trans-conductance, voltage, gain investigated ATLAS 2D simulator. inverter is primary logic that can be used verify device’s response applications. Further, CMOS JL-DG MOSFET, its parameters such as switching noise margin, delay analyzed. 0.43 V, margin 0.265 19.18 psec obtained for cell. MOSFET at 20 nm channel length prompted better results. Thus, bright future low-power